- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
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申请号: US18204548申请日: 2023-06-01
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公开(公告)号: US20240049452A1公开(公告)日: 2024-02-08
- 发明人: YU-TING LIN
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW NEW TAIPEI CITY
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW NEW TAIPEI CITY
- 分案原申请号: US17879971 2022.08.03
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A method of manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a sacrificial structure disposed on a substrate; arranging a photomask to cover the sacrificial structure, wherein the photomask includes a plurality of transparent portions, a plurality of central opaque portions, at least one first edge opaque portion and at least one second edge opaque portion between the first edge opaque portion and the central opaque portions; removing portions of the sacrificial structure to form a plurality of central openings, at least one first edge opening and at least one second edge opening through the central opaque portions, the first edge opaque portion, the second edge opaque portion and the transparent portions; and forming at least one edge word line on the substrate through the second edge opening and forming a plurality of central word lines on the substrate through the central openings.
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