Invention Publication
- Patent Title: METHODS OF SELECTIVE ATOMIC LAYER DEPOSITION
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Application No.: US18380803Application Date: 2023-10-17
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Publication No.: US20240052487A1Publication Date: 2024-02-15
- Inventor: Bhaskar Jyoti Bhuyan , Mark Saly , David Thompson , Tobin Kaufman-Osborn , Kurt Fredrickson , Thomas Knisley , Liqi Wu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- The original application number of the division: US17182906 2021.02.23
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/02

Abstract:
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
Public/Granted literature
- US12291779B2 Methods of selective atomic layer deposition Public/Granted day:2025-05-06
Information query
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