公开(公告)号：US20240047193A1

公开(公告)日：2024-02-08

申请号：US18378843

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US11823893B2

公开(公告)日：2023-11-21

申请号：US17068188

申请日：2020-10-12

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US11473198B2

公开(公告)日：2022-10-18

申请号：US16752618

申请日：2020-01-25

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly

IPC: C07F5/00 ,  C23C16/455 ,  C09D1/00 ,  C23C16/18 ,  C23C16/32 ,  C23C16/44 ,  C23C16/38 ,  C23C16/30 ,  C23C16/40 ,  C23C16/34 ,  C23C16/42 ,  C23C16/36 ,  C08F4/54 ,  C08F136/02

Abstract: Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g. atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

公开(公告)号：US20220259734A1

公开(公告)日：2022-08-18

申请号：US17176984

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: C23C16/455 ,  C07F7/00 ,  C07F7/22 ,  C07F7/02 ,  C07F7/30 ,  C23C16/18

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

公开(公告)号：US11306394B2

公开(公告)日：2022-04-19

申请号：US16915996

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley

IPC: C23C16/455 ,  C07F15/00 ,  C23C16/18

Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20200234943A1

公开(公告)日：2020-07-23

申请号：US16632164

申请日：2018-07-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20200002814A1

公开(公告)日：2020-01-02

申请号：US16456964

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C09D1/00 ,  C01G19/02 ,  C01B21/06 ,  C01B32/914 ,  C01B35/04 ,  C01B33/06 ,  C23C16/30

Abstract: Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11408068B2

公开(公告)日：2022-08-09

申请号：US17163687

申请日：2021-02-01

Applicant: Applied Materials, Inc. ,  Wayne State University

Inventor： Thomas Knisley ,  Keenan N. Woods ,  Mark Saly ,  Charles H. Winter ,  Apoorva Upadhyay

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/30 ,  C23C16/44 ,  H01L21/02 ,  H01L21/285

Abstract: Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.

公开(公告)号：US11384648B2

公开(公告)日：2022-07-12

申请号：US16843358

申请日：2020-04-08

Applicant: Applied Materials, Inc.

Inventor： Yuriy Melnik ,  Sukti Chatterjee ,  Kaushal Gangakhedkar ,  Jonathan Frankel ,  Lance A. Scudder ,  Pravin K. Narwankar ,  David Alexander Britz ,  Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: F01D5/28 ,  F01D9/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00 ,  F01D25/14

Abstract: Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.