Invention Publication
- Patent Title: LDO REGULATOR CAPABLE OF BEING OPERATED AT LOW VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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Application No.: US18342415Application Date: 2023-06-27
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Publication No.: US20240053783A1Publication Date: 2024-02-15
- Inventor: Hyung-Min Lee , Hyunjun Park , Woojoong Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Current Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Current Assignee Address: KR Seoul
- Priority: KR 20220100499 2022.08.11
- Main IPC: G05F1/575
- IPC: G05F1/575 ; G05F1/565 ; G05F3/24

Abstract:
A low dropout (LDO) regulator includes: one or more power transistors configured to dispose between an input node and an output node, wherein the input node is a node to which an input voltage is applied and the output node is a node from which an output voltage is output; a voltage comparing unit configured to generate a comparative signal based on a difference between the output voltage and a first reference voltage; a digital control unit configured to generate a control signal for gating of the one or more power transistors in response to the comparative signal; and a gate driving unit configured to output a gating signal for the one or more power transistors in response to the control signal, wherein the gating signal is corresponding to one of the input voltage and a negative of the input voltage.
Information query
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