公开(公告)号：US20240053783A1

公开(公告)日：2024-02-15

申请号：US18342415

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Min Lee ,  Hyunjun Park ,  Woojoong Jung

IPC: G05F1/575 ,  G05F1/565 ,  G05F3/24

CPC classification number: G05F1/575 ,  G05F1/565 ,  G05F3/247

Abstract: A low dropout (LDO) regulator includes: one or more power transistors configured to dispose between an input node and an output node, wherein the input node is a node to which an input voltage is applied and the output node is a node from which an output voltage is output; a voltage comparing unit configured to generate a comparative signal based on a difference between the output voltage and a first reference voltage; a digital control unit configured to generate a control signal for gating of the one or more power transistors in response to the comparative signal; and a gate driving unit configured to output a gating signal for the one or more power transistors in response to the control signal, wherein the gating signal is corresponding to one of the input voltage and a negative of the input voltage.