Invention Publication
- Patent Title: THROUGH-SUBSTRATE CONNECTIONS FOR RECESSED SEMICONDUCTOR DIES
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Application No.: US17884484Application Date: 2022-08-09
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Publication No.: US20240055397A1Publication Date: 2024-02-15
- Inventor: Thiagarajan Raman , Kunal R. Parekh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/538 ; H01L23/495 ; H01L23/492 ; H01L23/66 ; H01L23/498

Abstract:
This document discloses techniques, apparatuses, and systems for providing a semiconductor device assembly with through-substrate connections for recessed semiconductor dies. A semiconductor device assembly is described that includes a substrate having a first cavity and a second cavity. A first connective element is located at a side surface of the first cavity and a second connective element is located at a side surface of the second cavity. The semiconductor device assembly include a first semiconductor die and a second semiconductor die implemented at the first cavity and the second cavity, respectively. The first semiconductor die includes a third connective element at an edge surface of the die. The second semiconductor die includes a fourth connective element at an edge surface of the die. The dies are implemented at the cavities and connected through the connective elements to electrically couple the first die to the second die.
Information query
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