Invention Publication
- Patent Title: SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR DEVICE
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Application No.: US18446512Application Date: 2023-08-09
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Publication No.: US20240055399A1Publication Date: 2024-02-15
- Inventor: Kaimin LV , Ling-Yi Chuang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei City
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei City
- Priority: CN 2210957689.1 2022.08.10
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/538 ; H10B80/00 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L25/00

Abstract:
A semiconductor structure, a method for manufacturing same, and a semiconductor device are provided. The semiconductor structure includes: a substrate having a groove and power supply pins; a storage module located in the groove; in which the storage module includes a plurality of storage chips stacked in a first direction, the first direction being parallel to the bottom surface of the groove; power supply signal lines being provided in each of the storage chips, and at least one of the plurality of storage chips having a power supply wiring layer electrically connected to the power supply signal lines; and conductive parts connected with the power supply wiring layer and the power supply pins.
Information query
IPC分类: