- 专利标题： SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE
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申请号： US18493856申请日： 2023-10-25
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公开(公告)号： US20240055519A1公开(公告)日： 2024-02-15
- 发明人: Han-Jong Chia
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 分案原申请号： US16868675 2020.05.07
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/51 ; H01L29/06 ; G11C11/22 ; H01L21/02 ; H01L29/66
摘要：
Various embodiments of the present disclosure are directed towards an integrated chip including a switching layer over a semiconductor substrate. The switching layer comprises a first metal oxide. An upper conductive structure overlies the switching layer. The switching layer is spaced between opposing sidewalls of the upper conductive structure. A first dielectric layer is disposed along opposing sidewalls of the switching layer. The first dielectric layer comprises a second metal oxide different from the first metal oxide. A top surface of the switching layer and a top surface of the first dielectric layer directly underlie a bottom surface of the upper conductive structure.
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