发明公开
- 专利标题: SEMICONDUCTOR DEVICE WITH DAISY-CHAINED DELAY CELLS AND METHOD OF FORMING SAME
-
申请号: US17822559申请日: 2022-08-26
-
公开(公告)号: US20240056062A1公开(公告)日: 2024-02-15
- 发明人: Huaixin XIAN , Longbiao LEI , Sinpei GOA , Zhang-Ying YAN , Qingchao MENG , Jerry Chang Jui KAO
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人地址: TW Hsinchu
- 优先权: CN 2222144042.5 2022.08.15
- 主分类号: H03K3/86
- IPC分类号: H03K3/86 ; H03K3/037 ; H03K3/356
摘要:
A semiconductor device includes a first dummy group having a first set of dummy transistors; a first delay cell having a first set of active transistors; a second delay cell having a second set of active transistors; a second dummy group having a second set of dummy transistors; and relative to a first direction the first and second dummy groups and the first and second delay cells being arranged in a first sequence arranged as the first dummy group, the first delay cell, the second delay cell, and the second dummy group; and the first and second delay cells being free from having another dummy group therebetween.
公开/授权文献
信息查询