发明公开
- 专利标题: Extremely Low Resistance Films and Methods for Modifying or Creating Same
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申请号: US17945351申请日: 2022-09-15
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公开(公告)号: US20240062933A1公开(公告)日: 2024-02-22
- 发明人: Douglas J. Gilbert , Timothy S. Cale
- 申请人: Ambature, Inc.
- 申请人地址: US AZ Scottsdale
- 专利权人: Ambature, Inc.
- 当前专利权人: Ambature, Inc.
- 当前专利权人地址: US AZ Scottsdale
- 主分类号: H01B12/06
- IPC分类号: H01B12/06 ; H01B1/08 ; H01C7/00 ; H10N60/01 ; H10N60/85 ; B05D1/36 ; H01B12/14
摘要:
Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
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