公开(公告)号：US11201278B2

公开(公告)日：2021-12-14

申请号：US16576432

申请日：2019-09-19

申请人： Ambature, Inc.

发明人： Michael S. Lebby ,  Davis H. Hartmann

IPC分类号： H01L39/24 ,  H01L39/02 ,  H01L39/22

摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

公开(公告)号：US20190326501A1

公开(公告)日：2019-10-24

申请号：US16407160

申请日：2019-05-08

申请人： Ambature Inc.

发明人： Douglas J. Gilbert ,  Y. Eugene SHTEYN ,  Michae J. SMITH ,  Joel Patrick Hanna ,  Paul GREENLAND ,  Brian COPPA ,  Forrest NORTH

IPC分类号： H01L39/12 ,  H01B1/00 ,  G01R33/035 ,  C04B35/45 ,  G01K7/00 ,  H01F6/06 ,  H01L39/14 ,  H01L39/22 ,  H02K55/00 ,  H02K3/02 ,  G01L21/12

摘要： Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

公开(公告)号：US20230012293A1

公开(公告)日：2023-01-12

申请号：US17727784

申请日：2022-04-24

申请人： Ambature, Inc.

发明人： Douglas J. Gilbert ,  Timothy S. Cale

IPC分类号： H01L39/12 ,  H01L39/24

摘要： Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

公开(公告)号：US20200091398A1

公开(公告)日：2020-03-19

申请号：US16576432

申请日：2019-09-19

申请人： Ambature, Inc.

发明人： Michael S. Lebby ,  Davis H. Hartmann

IPC分类号： H01L39/24 ,  H01L39/22 ,  H01L39/02

摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

公开(公告)号：US09472324B2

公开(公告)日：2016-10-18

申请号：US14105212

申请日：2013-12-13

申请人： Ambature, Inc.

发明人： Douglas J. Gilbert ,  Timothy S. Cale

IPC分类号： H01B12/00 ,  H01L39/12 ,  H01B12/14 ,  H01B1/08 ,  H01C7/00 ,  H01L39/24 ,  H01B12/06 ,  B05D1/36

CPC分类号： H01B12/06 ,  B05D1/36 ,  H01B1/08 ,  H01B12/14 ,  H01C7/00 ,  H01L39/12 ,  H01L39/125 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2419 ,  H01L39/2464 ,  H01L39/2487 ,  Y10T428/31678

摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

摘要翻译： 通过在ELR膜的适当表面上沉积改性材料以产生改性的ELR膜，可以改善由ELR材料构成的极低电阻（“ELR”）膜的操作特性。 在本发明的一些实施方案中，ELR膜可以是“c膜”的形式。在本发明的一些实施方案中，ELR膜可以是“ab膜”的形式，“a膜” “或”b膜“。改性的ELR膜具有比单独的ELR膜或没有改性材料改善的操作特性。 这种操作特征可以包括在升高的温度下操作ELR状态，携带额外的电荷，以改进的磁性能操作，以改进的机械性能或其他改进的操作特性进行操作。 在本发明的一些实施方案中，ELR材料是混合价态的氧化铜 - 钙钛矿，例如但不限于YBCO。 在本发明的一些实施方案中，改性材料是易于​​氧接触的导电材料，例如但不限于铬。

公开(公告)号：US20140364319A1

公开(公告)日：2014-12-11

申请号：US14194226

申请日：2014-02-28

申请人： Ambature, Inc.

发明人： Douglas J. Gilbert

IPC分类号： H01B12/14 ,  H01L39/24 ,  B05D1/36

CPC分类号： H01B12/06 ,  B05D1/36 ,  H01B1/08 ,  H01B12/14 ,  H01C7/00 ,  H01L39/12 ,  H01L39/125 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2419 ,  H01L39/2464 ,  H01L39/2487 ,  Y10T428/31678

摘要： In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.

摘要翻译： 在本发明的一些实施方案中，可以修改现有的极低电阻材料（“ELR材料”）和/或可以通过增强（在现有ELR材料的情况下）和/或创建（在（ 新的ELR材料）ELR材料内的孔，使得孔保持在升高的温度，以免阻碍其中的电荷的传播。 在本发明的一些实施方案中，只要电荷通过孔的传播保持不受阻碍，材料应该保持在ELR状态; 否则，随着电荷通过孔径的传播受阻，ELR材料开始转变成非ELR状态。

公开(公告)号：US20140336053A1

公开(公告)日：2014-11-13

申请号：US14105212

申请日：2013-12-13

申请人： Ambature, Inc.

发明人： Douglas J. Gilbert ,  Timothy S. Cale

IPC分类号： H01B12/06 ,  H01L39/12

CPC分类号： H01B12/06 ,  B05D1/36 ,  H01B1/08 ,  H01B12/14 ,  H01C7/00 ,  H01L39/12 ,  H01L39/125 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2419 ,  H01L39/2464 ,  H01L39/2487 ,  Y10T428/31678

摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

摘要翻译： 通过在ELR膜的适当表面上沉积改性材料以产生改性的ELR膜，可以改善由ELR材料构成的极低电阻（“ELR”）膜的操作特性。 在本发明的一些实施方案中，ELR膜可以是“c膜”的形式。在本发明的一些实施方案中，ELR膜可以是“ab膜”的形式，“a膜” “或”b膜“。改性的ELR膜具有比单独的ELR膜或没有改性材料改善的操作特性。 这种操作特征可以包括在升高的温度下操作ELR状态，携带额外的电荷，以改进的磁性能操作，以改进的机械性能或其他改进的操作特性进行操作。 在本发明的一些实施方案中，ELR材料是混合价态的氧化铜 - 钙钛矿，例如但不限于YBCO。 在本发明的一些实施方案中，改性材料是易于​​氧接触的导电材料，例如但不限于铬。

公开(公告)号：US11974508B2

公开(公告)日：2024-04-30

申请号：US17547810

申请日：2021-12-10

申请人： Ambature, Inc.

发明人： Michael S. Lebby ,  Davis H. Hartmann

IPC分类号： H10N60/01 ,  H10N60/12 ,  H10N60/80

CPC分类号： H10N60/0941 ,  H10N60/0381 ,  H10N60/0632 ,  H10N60/124 ,  H10N60/805

摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

公开(公告)号：US11930722B2

公开(公告)日：2024-03-12

申请号：US17727784

申请日：2022-04-24

申请人： Ambature, Inc.

发明人： Douglas J. Gilbert ,  Timothy S. Cale

IPC分类号： H10N60/85 ,  H10N60/01

CPC分类号： H10N60/858 ,  H10N60/01 ,  H10N60/0296 ,  H10N60/85 ,  Y10T29/49014 ,  Y10T428/24322 ,  Y10T428/31678

摘要： Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

公开(公告)号：US11289639B2

公开(公告)日：2022-03-29

申请号：US16407160

申请日：2019-05-08

申请人： Ambature Inc.

发明人： Douglas J. Gilbert ,  Y. Eugene Shteyn ,  Michael J. Smith ,  Joel Patrick Hanna ,  Paul Greenland ,  Brian Coppa ,  Forrest North

IPC分类号： H01B1/08 ,  H01L39/00 ,  H01L39/12 ,  G01L21/12 ,  G01R33/035 ,  G01K7/00 ,  H01F6/06 ,  H01L39/14 ,  H01L39/22 ,  H02K55/00 ,  H02K3/02 ,  C04B35/45 ,  H01B1/00 ,  H01L23/532

摘要： Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.