Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies in a dielectric material, adjacent layers in the plurality of layers being coupled together by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; a package substrate coupled to a first side of the plurality of layers by second interconnects; a support structure coupled to a second side of the plurality of layers by third interconnects, the second side being opposite to the first side; and capacitors in at least the plurality of layers or the support structure. The capacitors are selected from at least planar capacitors, deep trench capacitors and via capacitors.