Invention Publication
- Patent Title: STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF STORAGE DEVICE
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Application No.: US18238282Application Date: 2023-08-25
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Publication No.: US20240069777A1Publication Date: 2024-02-29
- Inventor: Keunsan Park , Gyeongmin Kim , Joon-Whan Bae , Heetak Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220109942 2022.08.31 KR 20220149964 2022.11.10 KR 20230004966 2023.01.12 KR 20230004994 2023.01.12 KR 20230005013 2023.01.12 KR 20230005033 2023.01.12 KR 20230005040 2023.01.12 KR 20230005041 2023.01.12 KR 20230005043 2023.01.12 KR 20230005044 2023.01.12 KR 20230005046 2023.01.12 KR 20230005048 2023.01.12 KR 20230005050 2023.01.12 KR 20230005053 2023.01.12 KR 20230005058 2023.01.12
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.
Information query