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1.
公开(公告)号:US20240069777A1
公开(公告)日:2024-02-29
申请号:US18238282
申请日:2023-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Keunsan Park , Gyeongmin Kim , Joon-Whan Bae , Heetak Shin
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0652 , G06F3/0679 , G06F3/0604
Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.
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2.
公开(公告)号:US12292827B2
公开(公告)日:2025-05-06
申请号:US18238262
申请日:2023-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seunghyun Choi , Keunsan Park , Heetak Shin , Junyeong Han , Gyeongmin Kim , Joon-Whan Bae , Jooyoung Hwang
Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.
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3.
公开(公告)号:US20240070033A1
公开(公告)日:2024-02-29
申请号:US18238301
申请日:2023-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junyeong HAN , Kui-Yon Mun , Jooyoung Hwang , Keunsan Park , Gyeongmin Kim , Heetak Shin , Seunghyun Choi
CPC classification number: G06F11/1451 , G06F3/0619 , G06F3/0647 , G06F3/0652 , G06F3/0656 , G06F3/0679
Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.
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