公开(公告)号：US20240070033A1

公开(公告)日：2024-02-29

申请号：US18238301

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong HAN ,  Kui-Yon Mun ,  Jooyoung Hwang ,  Keunsan Park ,  Gyeongmin Kim ,  Heetak Shin ,  Seunghyun Choi

IPC: G06F11/14 ,  G06F3/06

CPC classification number: G06F11/1451 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0652 ,  G06F3/0656 ,  G06F3/0679

Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.

公开(公告)号：US20240069777A1

公开(公告)日：2024-02-29

申请号：US18238282

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunsan Park ,  Gyeongmin Kim ,  Joon-Whan Bae ,  Heetak Shin

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0652 ,  G06F3/0679 ,  G06F3/0604

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.

公开(公告)号：US11561723B2

公开(公告)日：2023-01-24

申请号：US17193140

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jekyeom Jeon ,  Jooyoung Hwang ,  Jeonguk Kang ,  Junhee Kim ,  Sunghyun Noh ,  Keunsan Park ,  Byungki Lee

IPC: G06F3/06

Abstract: A storage system performing an overwrite, a host system controlling the storage system, and an operating method of the storage system, wherein the storage system includes a memory device; and a controller that receives new data and an overwrite request from the host system, wherein the overwrite request includes a first logical address for old data and a second logical address for the new data, and performs an overwrite operation by writing the new data corresponding to the second logical address to the memory device and invalidating the old data corresponding to the first logical address according to the overwrite request.

公开(公告)号：US11467739B2

公开(公告)日：2022-10-11

申请号：US17076619

申请日：2020-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Geun Kim ,  Keunsan Park ,  Sangyoon Oh ,  Byung-Ki Lee ,  Yonghwa Lee ,  Jooyoung Hwang

IPC: G06F3/06

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

公开(公告)号：US12061816B2

公开(公告)日：2024-08-13

申请号：US18086770

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jekyeom Jeon ,  Jooyoung Hwang ,  Jeonguk Kang ,  Junhee Kim ,  Sunghyun Noh ,  Keunsan Park ,  Byungki Lee

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage system performing an overwrite, a host system controlling the storage system, and an operating method of the storage system, wherein the storage system includes a memory device; and a controller that receives new data and an overwrite request from the host system, wherein the overwrite request includes a first logical address for old data and a second logical address for the new data, and performs an overwrite operation by writing the new data corresponding to the second logical address to the memory device and invalidating the old data corresponding to the first logical address according to the overwrite request.

公开(公告)号：US11875036B2

公开(公告)日：2024-01-16

申请号：US17566309

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunghyun Noh ,  Byungki Lee ,  Junhee Kim ,  Keunsan Park ,  Jekyeom Jeon ,  Jinhwan Choi ,  Jooyoung Hwang

IPC: G06F3/06

CPC classification number: G06F3/0608 ,  G06F3/0655 ,  G06F3/0679

Abstract: A computing system includes a storage system configured to store data, and a host configured to compress a data block of a preset size loaded to a memory, generate a merged block of the preset size by merging a compressed block corresponding to the data block, an identifier of a node block referring the data block, and an offset indicating an index of the data block among at least one data block referred by the node block, and provide the merged block to the storage system.

公开(公告)号：US11775183B2

公开(公告)日：2023-10-03

申请号：US17939387

申请日：2022-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Geun Kim ,  Keunsan Park ,  Sangyoon Oh ,  Byung-Ki Lee ,  Yonghwa Lee ,  Jooyoung Hwang

IPC: G06F3/06

CPC classification number: G06F3/0622 ,  G06F3/0604 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0679

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.