- 专利标题： VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
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申请号： US17823969申请日： 2022-09-01
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公开(公告)号： US20240079461A1公开(公告)日： 2024-03-07
- 发明人: Brent A. Anderson , Su Chen Fan , Jay William Strane , Ruilong Xie
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/40 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.
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