发明公开
- 专利标题： HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US17975559申请日： 2022-10-27
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公开(公告)号： US20240079485A1公开(公告)日： 2024-03-07
- 发明人: Jih-Wen Chou , Chih-Hung Lu , Bo-An Tsai , Zheng-Chang Mu , Po-Hsien Yeh , Robin Christine Hwang
- 申请人： Powerchip Semiconductor Manufacturing Corporation
- 申请人地址： TW Hsinchu
- 专利权人： Powerchip Semiconductor Manufacturing Corporation
- 当前专利权人： Powerchip Semiconductor Manufacturing Corporation
- 当前专利权人地址： TW Hsinchu
- 优先权： TW 1133309 2022.09.02
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/768 ; H01L29/20 ; H01L29/66
摘要：
A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.
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