- 专利标题: PROCESS PROXIMITY EFFECT CORRECTION METHOD AND PROCESS PROXIMITY EFFECT CORRECTION DEVICE
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申请号: US18326659申请日: 2023-05-31
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公开(公告)号: US20240085777A1公开(公告)日: 2024-03-14
- 发明人: Dae Young PARK , Jeong Hoon KO , Seong Ryeol KIM , Young-Gu KIM , Tae Hoon KIM , Hyun Joong KIM , Young Ju LEE
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220114356 2022.09.08
- 主分类号: G03F1/36
- IPC分类号: G03F1/36 ; G03F1/80 ; G03F1/84 ; G03F7/00 ; G03F7/20
摘要:
Provided is a process proximity effect correction method capable of efficiently improving the dispersion of patterns. There is a process proximity effect correction method according to some embodiments, the process proximity effect correction method of a process proximity effect correction device for performing process proximity effect correction (PPC) of a plurality of patterns using a machine learning module executed by a processor, comprising: training a sensitivity model by inputting a layout image of the plurality of patterns and a layout critical dimension (CD) of the plurality of patterns into the machine learning module; estimating an after cleaning inspection critical dimension (ACI-CD) sensitivity prediction value of the plurality of patterns by inferring an ACI-CD prediction value of the plurality of patterns; and determining a correction rate of the layout CD of the plurality of patterns using the estimated sensitivity prediction value.
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