Invention Publication
- Patent Title: WET ETCH PROCESS AND METHOD TO PROVIDE UNIFORM ETCHING OF MATERIAL FORMED WITHIN FEATURES HAVING DIFFERENT CRITICAL DIMENSION (CD)
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Application No.: US17942359Application Date: 2022-09-12
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Publication No.: US20240087908A1Publication Date: 2024-03-14
- Inventor: Shan Hu , Henan Zhang , Sangita Kumari , Peter Delia
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/306 ; H01L21/3213

Abstract:
Embodiments of a wet etch process and method are disclosed to provide uniform etching of material formed within features (such as, e.g., trenches, holes, slits, etc.) having different critical dimension (CD). By combining a non-aqueous organic-based etch solution and an aqueous-based etch solution (either in series or in parallel) within a wet etch process, the disclosed embodiments utilize the opposing effects of CD-dependent etching to provide uniform etching of the material, regardless of CD.
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