A piezoresistive transistor device includes a first transistor cell having a first piezoelectric material body and a first piezoresistive material body arranged in a stacked configuration. A first electrical resistance of the first piezoresistive material body is dependent upon a voltage applied across the first piezoelectric material body by way of a pressure applied by the first piezoelectric material body to the first piezoresistive material body. A second transistor cell includes a second piezoelectric material body and a second piezoresistive material body arranged in a stacked configuration. A second electrical resistance of the second piezoresistive material body is dependent upon a voltage applied across the second piezoelectric material body by way of a pressure applied by the second piezoelectric material body to the second piezoresistive material body. An internal electrical interconnect is configured to electrically connect the first electrical resistance and the second electrical resistance in series or in parallel.