Invention Publication
- Patent Title: SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US18182529Application Date: 2023-03-13
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Publication No.: US20240096795A1Publication Date: 2024-03-21
- Inventor: Kotaro FUJII
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP 22149422 2022.09.20
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H10B41/10 ; H10B41/27 ; H10B41/35 ; H10B43/10 ; H10B43/27 ; H10B43/35
Abstract:
A semiconductor storage device according to an embodiment includes a first wiring, a second wiring, a first insulating layer, a first insulator, and a conductor. The first insulating layer has a first portion, a second portion, and a third portion. The first portion is stacked on the first wiring. The second portion is stacked on the second wiring. The third portion is on the opposite side of the first wiring and the second wiring with respect to the first portion and the second portion.
Information query
IPC分类:
