Invention Publication
- Patent Title: Source/Drain Metal Contact and Formation Thereof
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Application No.: US18520996Application Date: 2023-11-28
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Publication No.: US20240096961A1Publication Date: 2024-03-21
- Inventor: Shih-Chuan CHIU , Tien-Lu LIN , Yu-Ming LIN , Chia-Hao CHANG , Chih-Hao WANG , Jia-Chuan YOU
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- The original application number of the division: US16556922 2019.08.30
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/768 ; H01L29/66 ; H01L29/78
Abstract:
A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.
Information query
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