Invention Publication
- Patent Title: NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
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Application No.: US18264202Application Date: 2022-01-04
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Publication No.: US20240112909A1Publication Date: 2024-04-04
- Inventor: Hisayoshi MATSUO , Hideyuki OKITA , Masahiro HIKITA , Yasuhiro UEMOTO , Manabu YANAGIHARA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Priority: JP 21025907 2021.02.22
- International Application: PCT/JP2022/000030 2022.01.04
- Date entered country: 2023-08-03
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B25/18 ; C30B29/40 ; H01L29/20 ; H01L29/778
Abstract:
A nitride semiconductor epitaxial substrate includes: a Si substrate; a nitride semiconductor epitaxial layer disposed above the Si substrate; and a mixed crystal layer disposed between the Si substrate and the nitride semiconductor epitaxial layer, and containing Si and a group III metal element, the mixed crystal layer containing a high concentration of C. The mixed crystal layer has a concentration of at least 1.0×10+21 cm−3, and a transition metal element concentration of at most 5.0×10+16 cm−3.
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