A transistor comprising a first source region, a first drain region disposed on a first side of the first source region, a first active region being formed between the first source region and the first drain region, a second drain region disposed on a second side of the first source region, a second active region being formed between the first source region and the second drain region, directions of greatest extension of the first and second active regions being non-parallel, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.