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公开(公告)号：US11967896B2
公开(公告)日：2024-04-23
申请号：US17935436
申请日：2022-09-26
CPC分类号： H02M3/07 , H03F3/195 , H03F3/245 , H03F2200/451
摘要： Charging and discharging circuits for assisting charge pumps are disclosed. In certain embodiments, a radio frequency (RF) switch system includes an RF switch that receives an RF signal and is controlled by a switch control signal received at an input, a first charge pump configured to generate a first charge pump voltage, a level shifter powered by the first charge pump voltage and that generates the switch control signal based on a switch enable signal, and a charge pump assistance switch coupled to the input of the radio frequency switch and that activates to assist the first charge pump in response to a transition of the switch enable signal from a first state to a second state.
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2.发明公开公开(公告)号：US20240113190A1
公开(公告)日：2024-04-04
申请号：US18370120
申请日：2023-09-19
发明人： Guillaume Alexandre Blin , Yu Zhu
IPC分类号： H01L29/423 , H01L27/088 , H01L29/08 , H01L29/78
CPC分类号： H01L29/4238 , H01L27/0886 , H01L29/0865 , H01L29/0882 , H01L29/7816 , H01L29/7835
摘要： A transistor comprising a first drain region split into first and second drain sub-regions aligned lengthwise and separated by a first low conductivity region, a first source region disposed on a first side of the first drain region split into first and second source sub-regions aligned lengthwise and separated by a second low conductivity region, a second source region disposed on a second side of the first drain region opposite the first side, the second source region split into third and fourth source sub-regions aligned lengthwise and separated by a third low conductivity region, a first gate electrode finger disposed over first and second active regions between the first drain region and first source region, and a second gate electrode finger disposed over third and fourth active regions between the first drain region and second source region.
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公开(公告)号：US20240113181A1
公开(公告)日：2024-04-04
申请号：US18370125
申请日：2023-09-19
IPC分类号： H01L29/417 , H01L29/423 , H01L29/778
CPC分类号： H01L29/41775 , H01L29/42316 , H01L29/7787
摘要： A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region defined between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side and displaced in a widthwise direction from the first source region, a second active region defined between the first drain region and the second source region, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
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公开(公告)号：US20240113169A1
公开(公告)日：2024-04-04
申请号：US18370144
申请日：2023-09-19
IPC分类号： H01L29/06 , H01L29/20 , H01L29/417 , H01L29/778
CPC分类号： H01L29/0692 , H01L29/2003 , H01L29/41758 , H01L29/7786
摘要： A transistor comprising a first source region, a first drain region disposed on a first side of the first source region, a first active region being formed between the first source region and the first drain region, a second drain region disposed on a second side of the first source region, a second active region being formed between the first source region and the second drain region, directions of greatest extension of the first and second active regions being non-parallel, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
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公开(公告)号：US20240079314A1
公开(公告)日：2024-03-07
申请号：US18457271
申请日：2023-08-28
发明人： Hailing Wang , Guillaume Alexandre Blin , David Scott Whitefield , Michael Joseph McPartlin , Lui Ray Lam
IPC分类号： H01L23/522 , H01G4/30
CPC分类号： H01L23/5223 , H01G4/30
摘要： A circuit can include a capacitor that has a semiconductor layer, a dielectric layer, and a conductive layer. The circuit can include an insulating layer and a metal or conductive layer. The metal layer can have a first portion that has a first plurality of fingers, and a second portion that has a second plurality of fingers, which can be interdigitated with the first plurality of fingers. The circuit can include one or more first electrical connections that electrically couple the first portion of the metal layer to the semiconductor layer of the capacitor. The circuit can include one or more second electrical connections that electrically couple the second portion of the metal layer to the conductive layer of the capacitor. A capacitance provided by the interdigitated first and second pluralities of fingers can be at least about 3% of a capacitance provided by the capacitor.
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公开(公告)号：US20240038865A1
公开(公告)日：2024-02-01
申请号：US18357426
申请日：2023-07-24
CPC分类号： H01L29/4238 , H01L27/1211 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/7811 , H01L27/0629
摘要： Apparatus and methods for multi-gate radio frequency (RF) switches are disclosed herein. The RF switches use various layout design techniques to improve figure of merit (FOM). Examples of such techniques include using only two field-effect transistors (FETs) in series to maintain shorter fingers for lower metal resistance, placing a body contact on only one side of the RF switch layout, implementing metallization with reduced coupling from input to output, and/or providing air gaps to improve high frequency performance.
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公开(公告)号：US20230420332A1
公开(公告)日：2023-12-28
申请号：US18213200
申请日：2023-06-22
IPC分类号： H01L23/367 , H01L23/373
CPC分类号： H01L23/3677 , H01L23/373
摘要： An integrated device die is disclosed. The integrated device die can include a substrate having a first side and a second side opposite the first side, a heat generating electronic component disposed over the first side of the substrate, a dielectric layer disposed such that the heat generating electronic component is positioned at least partially between the substrate and the dielectric layer. A surface of the dielectric layer that faces away from the substrate includes a terminal that is electrically connected to the heat generating electronic component and is laterally offset from the heat generating electronic component. The thermally conductive structure is positioned between the substrate and the terminal. The substrate and the thermally conductive structure at least partially define a thermal pathway between the heat generating electronic component and the terminal.
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公开(公告)号：US11811438B2
公开(公告)日：2023-11-07
申请号：US17445444
申请日：2021-08-19
CPC分类号： H04B1/0483 , H03F3/193 , H04B1/0458 , H04B1/0475
摘要： Systems and methods for magnitude and phase trimming are provided. In one aspect, a radio frequency (RF) trimmer circuit includes an input terminal configured to receive an RF signal, an output terminal configured to output the RF signal, a control input configured to receive a control signal, at least one impedance element, and at least one transistor configured to selectively connect the impedance element onto a path between the input and output terminals. The selectively connecting the impedance element controls at least one of a magnitude trim and a phase trim of the RF signal.
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9.发明公开公开(公告)号：US20230280372A1
公开(公告)日：2023-09-07
申请号：US18105029
申请日：2023-02-02
CPC分类号： G01R1/07342 , G01R31/2884 , H01L22/32 , H01L22/34 , H01L23/481
摘要： A probe card for testing or trimming or programming a semiconductor wafer including a first die including a first integrated circuit having a trimmable or programmable component. The probe card including at least one probe arranged to make electrical contact with at least one probe pad arranged on the wafer. The at least one probe pad being electrically connected to the trimmable or programmable component and being arranged in a saw street of the wafer.
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10.发明公开公开(公告)号：US20230253270A1
公开(公告)日：2023-08-10
申请号：US18104992
申请日：2023-02-02
CPC分类号： H01L22/32 , G01R31/2601 , H01L22/20
摘要： A probe card for testing or trimming or programming a semiconductor wafer having a first die including a first integrated circuit having a trimmable or programmable component. The probe card includes at least one probe arranged to make electrical contact with a contact pad of a second die arranged adjacent to the first die. The contact pad of the second die being configured to act as a probe pad and being electrically connected to the trimmable or programmable component of the first die.
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