- 专利标题: Reduced Gate Drive for Power Converter with Dynamically Switching Ratio
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申请号: US17960712申请日: 2022-10-05
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公开(公告)号: US20240120837A1公开(公告)日: 2024-04-11
- 发明人: Antony Christopher Routledge , Satish Kumar Vangara
- 申请人: pSemi Corporation
- 申请人地址: US CA San Diego
- 专利权人: pSemi Corporation
- 当前专利权人: pSemi Corporation
- 当前专利权人地址: US CA San Diego
- 主分类号: H02M3/157
- IPC分类号: H02M3/157 ; H02M1/00
摘要:
Circuits and methods for selectable conversion ratio power converters that include low-dropout (LDO) power supplies adapted to select voltage inputs based on the selected conversion ratio while achieving high efficiency. The LDO power supplies limit current through power FETs of power converters, thereby mitigating or eliminating potentially damaging events. In some embodiments, first and second full gate-drive LDOs have “wired-OR” outputs which may power a target circuit such as a pre-driver (and optionally, a level-shifter) coupled to the gate of a power FET. In some embodiments, first and second reduced gate-drive LDOs have “wired-OR” outputs that may power a final driver coupled to the gate of a power FET. Some embodiments have dual full gate-drive LDOs that power a target circuit such as a pre-driver (and optionally, a level-shifter), while dual reduced gate-drive LDOs that power a final driver coupled to the gate of the power FET.
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