- 专利标题: Memory system and memory access interface device thereof
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申请号: US17973005申请日: 2022-10-24
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公开(公告)号: US20240135999A1公开(公告)日: 2024-04-25
- 发明人: FU-CHIN TSAI , GER-CHIH CHOU , CHUN-CHI YU , CHIH-WEI CHANG
- 申请人: REALTEK SEMICONDUCTOR CORPORATION
- 申请人地址: TW Hsinchu
- 专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C16/32
- IPC分类号: G11C16/32 ; G11C16/26
摘要:
The present disclosure discloses a memory access interface device. A clock generation circuit generates reference clock signals. Each of access signal transmission circuits each includes a duty cycle adjusting circuit, a duty cycle detection circuit, a frequency division circuit and an asynchronous first-in-first-out circuit. The duty cycle adjusting circuit performs duty cycle adjustment on one of the reference clock signals according to a duty cycle detection signal to generate an output clock signal having a duty cycle. The duty cycle detection circuit detects a variation of the duty cycle to generate the duty cycle detection signal. The frequency division circuit divides a frequency of the output clock signal to generate a read clock signal. The asynchronous first-in-first-out circuit receives an access signal from a memory access controller and outputs an output access signal according to the read clock signal to access the memory device accordingly.
公开/授权文献
- US20240233837A9 Memory system and memory access interface device thereof 公开/授权日:2024-07-11
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