Invention Publication
- Patent Title: METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
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Application No.: US18202650Application Date: 2023-05-25
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Publication No.: US20240136232A1Publication Date: 2024-04-25
- Inventor: Inkeun BAEK , Suhwan PARK , Ikseon JEON , Namil KOO , Ingi KIM , Jaeho KIM , Junbum PARK , Sunhong JUN
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si
- Priority: KR 20220138433 2022.10.24
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01N21/95

Abstract:
Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.
Public/Granted literature
- US20240234216A9 METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER Public/Granted day:2024-07-11
Information query
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