Invention Publication
- Patent Title: Conductive Traces in Semiconductor Devices and Methods of Forming Same
-
Application No.: US18401815Application Date: 2024-01-02
-
Publication No.: US20240136280A1Publication Date: 2024-04-25
- Inventor: Chao-Wen Shih , Chen-Hua Yu , Han-Ping Pu , Hsin-Yu Pan , Hao-Yi Tsai , Sen-Kuei Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US14688862 2015.04.16
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/56 ; H01L23/00 ; H01L23/29 ; H01L23/31 ; H01L23/522 ; H01L23/532 ; H01L23/552

Abstract:
A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.
Information query
IPC分类: