Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
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Application No.: US18404922Application Date: 2024-01-05
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Publication No.: US20240140782A1Publication Date: 2024-05-02
- Inventor: PO CHEN YEH , YI-HSIEN CHANG , FU-CHUN HUANG , CHING-HUI LIN , CHIAHUNG LIU , SHIH-FEN HUANG , CHUN-REN CHENG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW HSINCHU
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW HSINCHU
- The original application number of the division: US17838023 2022.06.10
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.
Public/Granted literature
- US12227410B2 Semiconductor device and method for forming the same Public/Granted day:2025-02-18
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