发明公开
- 专利标题： DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
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申请号： US18384677申请日： 2023-10-27
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公开(公告)号： US20240145463A1公开(公告)日： 2024-05-02
- 发明人: Kyoungil DO , Jinwoo JUNG , Jooyoung SONG , Mijin LEE , Chanhee JEON
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR 20220141613 2022.10.28 KR 20230000365 2023.01.02
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L29/74
摘要：
A device including a silicon controlled rectifier including an anode and a cathode; at least one first transistor connected between the anode and a gate of the silicon controlled rectifier; and a second transistor including a source connected to one from among the cathode or the anode, and a drain connected to a body of the at least one first transistor.
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IPC分类:
