Invention Publication
- Patent Title: DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
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Application No.: US18384677Application Date: 2023-10-27
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Publication No.: US20240145463A1Publication Date: 2024-05-02
- Inventor: Kyoungil DO , Jinwoo JUNG , Jooyoung SONG , Mijin LEE , Chanhee JEON
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220141613 2022.10.28 KR 20230000365 2023.01.02
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74
Abstract:
A device including a silicon controlled rectifier including an anode and a cathode; at least one first transistor connected between the anode and a gate of the silicon controlled rectifier; and a second transistor including a source connected to one from among the cathode or the anode, and a drain connected to a body of the at least one first transistor.
Information query
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