Invention Publication
- Patent Title: METHOD FOR MANUFACTURING DISPLAY APPARATUS
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Application No.: US18263362Application Date: 2022-01-20
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Publication No.: US20240147761A1Publication Date: 2024-05-02
- Inventor: Yuichi YANAGISAWA , Shinya SASAGAWA , Shiro NISHIZAKI , Ryota HODO
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP 21015903 2021.02.03
- International Application: PCT/IB2022/050453 2022.01.20
- Date entered country: 2023-07-28
- Main IPC: H10K59/12
- IPC: H10K59/12 ; H10K59/124 ; H10K59/32 ; H10K71/10 ; H10K71/20 ; H10K71/60 ; H10K85/10

Abstract:
A method for manufacturing a display apparatus with high display quality is provided. The method is for manufacturing a display apparatus including first to third insulators, first and second conductors, and a first EL layer. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. Next, a first opening portion reaching the first conductor is formed in a region of the second insulator overlapping with the first conductor. A positive photoresist is applied to regions over the first and second insulators and over the first conductor, and a second opening portion with an inversely tapered structure reaching the first conductor and the second insulator is formed in a region of the photoresist overlapping with the first opening portion and the first conductor. The first EL layer, the second conductor, and the third insulator are sequentially formed on a bottom portion of the second opening portion of the photoresist and over the photoresist, and then, the photoresist and the first EL layer, the second conductor, and the third insulator formed over the photoresist are removed.
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