公开(公告)号：US20250031415A1

公开(公告)日：2025-01-23

申请号：US18715890

申请日：2022-11-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hitoshi KUNITAKE ,  Ryota HODO ,  Tatsuya ONUKI

IPC: H01L29/786 ,  H01L27/02 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor including a first oxide, a second transistor including a second oxide, and a third oxide. The first oxide includes a channel formation region of the first transistor. The second oxide includes a channel formation region of the second transistor. The third oxide contains the same material as the first oxide and the second oxide. The third oxide is separated from the first oxide and the second oxide. In a top view, the third oxide is positioned between the first oxide and the second oxide. The third oxide is placed in the same layer as the first oxide and the second oxide.

公开(公告)号：US20250008741A1

公开(公告)日：2025-01-02

申请号：US18691160

申请日：2022-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takanori MATSUZAKI ,  Tatsuya ONUKI ,  Hitoshi KUNITAKE ,  Ryota HODO ,  Yasuhiro JINBO

IPC: H10B53/30

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a first electrode, a transistor including a back gate, a capacitor including a pair of electrodes, and a first insulator that can have ferroelectricity between the back gate of the transistor and a semiconductor. The first insulator overlaps with the semiconductor with a second insulator therebetween. One of a source electrode and a drain of the transistor is electrically connected to the first electrode. The other of the source and the drain of the transistor is electrically connected to one electrode of the pair of electrodes. The pair of electrodes are each in contact with the first insulator and include a region where the pair of electrodes overlap with each other with the first insulator therebetween. As the first insulator, a ferroelectric is used.

公开(公告)号：US20240423026A1

公开(公告)日：2024-12-19

申请号：US18702404

申请日：2022-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Hiromi SAWAI

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/124

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer, a second insulating layer, a first light-emitting element, a second light-emitting element, and a resin layer. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second organic layer, and the common electrode. The first insulator has a groove. The groove has a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode. The second insulating layer has a region in contact with part of the top surface of the first organic layer, a region in contact with the side surface of the first organic layer, and a region in contact with the first insulating layer below the first pixel electrode. The resin layer is positioned between the first organic layer and the second organic layer. The common electrode is provided to cover the top surface of the resin layer.

公开(公告)号：US20240423025A1

公开(公告)日：2024-12-19

申请号：US18701269

申请日：2022-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Yasunori SASAMURA ,  Shinya SASAGAWA

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

Abstract: A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first coloring layer, a second coloring layer, and a first insulating layer. The first light-emitting device includes a first pixel electrode over the first insulating layer, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting device includes a second pixel electrode over the first insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer. The first coloring layer is provided to overlap with the first light-emitting device. The second coloring layer is provided to overlap with the second light-emitting device. The first coloring layer and the second coloring layer transmit light of different wavelength ranges. The first insulating layer includes a depressed portion between the first pixel electrode and the second pixel electrode. A third EL layer is provided in the depressed portion of the first insulating layer. The first EL layer, the second EL layer, and the third EL layer contain the same material. The sum of the thickness of the first pixel electrode and the depth of the depressed portion is larger than the thickness of the third EL layer.

公开(公告)号：US20240130163A1

公开(公告)日：2024-04-18

申请号：US18276075

申请日：2022-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Ryota HODO

IPC: H10K59/122 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K39/34 ,  H10K59/1201

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer. The first sidewall is provided to cover at least part of a side surface of the first pixel electrode, a side surface of the first light-emitting layer, a side surface of the first intermediate layer, and a side surface of the second light-emitting layer. A second sidewall is provided to cover at least part of a side surface of the second pixel electrode and a side surface of the light-receiving layer.

公开(公告)号：US20240130159A1

公开(公告)日：2024-04-18

申请号：US18280518

申请日：2022-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Yasuhiro JINBO

IPC: H10K59/121 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K59/12 ,  H10K59/80 ,  H10K71/12 ,  H10K71/16

CPC classification number: H10K59/121 ,  H10K50/15 ,  H10K50/16 ,  H10K50/171 ,  H10K50/181 ,  H10K59/1201 ,  H10K59/873 ,  H10K71/12 ,  H10K71/16 ,  H10K2102/351

Abstract: A highly reliable display device with high display quality is provided. The display device includes a first light-emitting element, a second light-emitting element provided to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region in contact with the side surface of the first EL layer, and the second protective layer includes a region in contact with the side surface of the second EL layer. The insulating layer is provided between the first protective layer and the second protective layer. The common electrode is provided over the first EL layer, over the second EL layer, over the first protective layer, over the second protective layer, and over the insulating layer.

公开(公告)号：US20240107861A1

公开(公告)日：2024-03-28

申请号：US18257629

申请日：2021-12-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Ryota HODO ,  Yuichi YANAGISAWA

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/121

CPC classification number: H10K59/878 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/879 ,  H10K2102/3026

Abstract: A display device capable of displaying high-quality images can be provided. A display device includes a first light-emitting element, a second light-emitting element, a first protective layer, a second protective layer, and a gap. The first light-emitting element includes a first lower electrode, a first EL layer over the first lower electrode, a first upper electrode over the first EL layer, and the second light-emitting element includes a second lower electrode, a second EL layer over the second lower electrode, and a second upper electrode over the second EL layer. The first light-emitting element and the second light-emitting element are adjacent to each other. The first protective layer is provided over the first light-emitting element and the second light-emitting element and includes a region in contact with the side surface of the first EL layer and the side surface of the second EL layer. The second protective layer is provided over the first protective layer. The gap is provided between the first EL layer and the second EL layer and is provided between the first protective layer and the second protective layer.

公开(公告)号：US20230411500A1

公开(公告)日：2023-12-21

申请号：US18207821

申请日：2023-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshiya ENDO ,  Ryota HODO

IPC: H01L29/66

CPC classification number: H01L29/66969

Abstract: To manufacture a semiconductor device by a method including the steps of: forming an oxide over a substrate, a first conductor over the oxide, and a second conductor over the first conductor; forming a first insulator to cover the oxide, the first conductor, and the second conductor; forming an opening in the first insulator to divide the second conductor into a third conductor and a fourth conductor; forming a second insulator and a third insulator to cover the oxide and the first insulator; processing the second insulator and the third insulator into a fourth insulator and a fifth insulator; processing the first conductor using the fourth insulator and the fifth insulator as a mask to divide the first conductor into a fifth conductor and a sixth conductor; and removing the fifth insulator.

公开(公告)号：US20230200198A1

公开(公告)日：2023-06-22

申请号：US18079994

申请日：2022-12-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Sachiko KAWAKAMI ,  Nobuharu OHSAWA ,  Yuji IWAKI ,  Ryota HODO ,  Kentaro SUGAYA ,  Shinya SASAGAWA ,  Takahiro FUJIE ,  Yoshikazu HIURA ,  Toshiki SASAKI ,  Takeyoshi WATABE ,  Kunihiko SUZUKI

IPC: H10K71/00 ,  H10K85/60

CPC classification number: H01L51/56 ,  H01L51/0072 ,  H01L51/5092

Abstract: To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.

公开(公告)号：US20220367450A1

公开(公告)日：2022-11-17

申请号：US17771565

申请日：2020-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shuhei NAGATSUKA ,  Takuya KAWATA ,  Ryota HODO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/108 ,  H01L27/1156 ,  H01L29/786 ,  H01L29/792

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, a third insulator over the second insulator, a fourth insulator over the third insulator, and an opening region. The opening region includes the second insulator, the third insulator over the second insulator, and the fourth insulator over the third insulator. The third insulator includes an opening reaching the second insulator. The fourth insulator is in contact with a top surface of the second insulator inside the opening.