Invention Publication
- Patent Title: SUBSTRATE PROCESSING METHOD
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Application No.: US18413074Application Date: 2024-01-16
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Publication No.: US20240150890A1Publication Date: 2024-05-09
- Inventor: Atsuki FUKAZAWA , Hiroki MAEHARA
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP 21123465 2021.07.28
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/06 ; C23C16/26 ; C23C16/455 ; C23C16/50 ; C23C16/56

Abstract:
A substrate processing method includes step a), step b), step c), step d), step e), and step f). Step a) is a step of providing a substrate that has a pattern where a protection target film is positioned on a bottom part of the pattern. Step b) is a step of laminating a catalyst film on the protection target film. Step c) is a step of forming a protection film that supports the catalyst film from below and covers the protection target film, in the pattern, by a VLS growth method. Step d) is a step of removing the catalyst film. Step e) is a step of applying a predetermined process to a part of the substrate that is different from the pattern in a state where the protection target film is covered by the protection film. Step f) is a step of removing the protection film in the pattern.
Information query
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