公开(公告)号：US20240150890A1

公开(公告)日：2024-05-09

申请号：US18413074

申请日：2024-01-16

Applicant: Tokyo Electron Limited

Inventor： Atsuki FUKAZAWA ,  Hiroki MAEHARA

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/042 ,  C23C16/06 ,  C23C16/26 ,  C23C16/45555 ,  C23C16/50 ,  C23C16/56

Abstract: A substrate processing method includes step a), step b), step c), step d), step e), and step f). Step a) is a step of providing a substrate that has a pattern where a protection target film is positioned on a bottom part of the pattern. Step b) is a step of laminating a catalyst film on the protection target film. Step c) is a step of forming a protection film that supports the catalyst film from below and covers the protection target film, in the pattern, by a VLS growth method. Step d) is a step of removing the catalyst film. Step e) is a step of applying a predetermined process to a part of the substrate that is different from the pattern in a state where the protection target film is covered by the protection film. Step f) is a step of removing the protection film in the pattern.

公开(公告)号：US20180366641A1

公开(公告)日：2018-12-20

申请号：US16008659

申请日：2018-06-14

Applicant: Tokyo Electron Limited

Inventor： Hiroki MAEHARA ,  Naoki WATANABE ,  Kanto NAKAMURA

IPC: H01L43/12 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

公开(公告)号：US20240371606A1

公开(公告)日：2024-11-07

申请号：US18777099

申请日：2024-07-18

Applicant: Tokyo Electron Limited

Inventor： Atsuki FUKAZAWA ,  Hiroki MAEHARA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

Abstract: A technique for performing local film formation at a desired position on a substrate by using plasma is provided. A plasma film forming apparatus includes a chamber, a substrate support configured to support a substrate in the chamber, a first nozzle configured to supply first gas that is formed into plasma to a region on the substrate support, a second nozzle configured to supply second gas that reacts with the first gas into the chamber, in which the first gas reacts with the second gas in the chamber to form a film at a predetermined position on the substrate supported by the substrate support, and a mover configured to move the second nozzle relatively to the substrate support, in which the predetermined position is determined based on a position of the second nozzle relative to the substrate support.

公开(公告)号：US20230094546A1

公开(公告)日：2023-03-30

申请号：US17954105

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Naoki UMESHITA ,  Toshikazu AKIMOTO ,  Hiroki MAEHARA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.

公开(公告)号：US20220320423A1

公开(公告)日：2022-10-06

申请号：US17656536

申请日：2022-03-25

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Hiroki MAEHARA

IPC: H01L43/12 ,  H01L27/22 ,  H01J37/32

Abstract: An etching method of etching a wafer by sputtering using ions in plasma includes accommodating the wafer in an internal space of a plasma processing apparatus, and etching a multilayer film by sputtering using ions. The wafer includes a multilayer film containing a non-volatile material and a mask layer on a surface of the multilayer film, and an exposed space of a region not covered by the mask layer. An aspect ratio h/D obtained by dividing a height h of the mask layer by a distance D between two adjacent sidewalls of the mask layer satisfies a condition: h/D≥1/(tan (φ)−tan (θ)). θ indicates an inclination angle of the sidewalls with a vertical surface perpendicular to the surface. φ indicates an upper limit of an incidence angle of ions on the vertical surface. φ is larger than θ.

公开(公告)号：US20210028356A1

公开(公告)日：2021-01-28

申请号：US17040483

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ken ANDO ,  Hiroki MAEHARA ,  Jun SATO ,  Kiyoshi MAEDA ,  Shigeru TAHARA

IPC: H01L43/12 ,  H01L43/08

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

公开(公告)号：US20200232090A1

公开(公告)日：2020-07-23

申请号：US16488217

申请日：2018-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MAEHARA ,  Naoki WATANABE ,  Toru ISHII ,  Kanto NAKAMURA ,  Makoto SAITO ,  David HURLEY ,  Ian COLGAN

IPC: C23C14/54 ,  H01L21/683 ,  H01L21/67 ,  H01L21/677 ,  H01L43/12 ,  C23C14/56 ,  C23C14/50 ,  C23C14/52

Abstract: A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.