Invention Publication
- Patent Title: METHOD OF MANUFACTURING EXTREME ULTRAVIOLET (EUV) MASK FOR FORMING SEMICONDUCTOR MEMORY DEVICE
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Application No.: US18381731Application Date: 2023-10-19
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Publication No.: US20240152043A1Publication Date: 2024-05-09
- Inventor: Minseung SONG , Janghoon KIM , Sangho YUN , Chan HWANG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220146390 2022.11.04
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/70 ; G03F1/80 ; G03F7/00

Abstract:
A method of manufacturing an extreme ultraviolet mask including preparing a preliminary layout, forming a plurality of preliminary target patterns by using a plurality of preliminary spacer patterns formed by using the preliminary layout, evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns, preparing a layout configured to form a plurality of spacer patterns by modifying the preliminary layout when the plurality of preliminary target patterns include the abnormal target pattern, and manufacturing an extreme ultraviolet mask with the layout to form a plurality of target patterns by using the plurality of spacer patterns, wherein, the plurality of preliminary spacer patterns extend in one direction.
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