公开(公告)号：US20220082926A1

公开(公告)日：2022-03-17

申请号：US17308484

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soonmok HA ,  Jaehee KIM ,  Sangho YUN ,  Chan HWANG

IPC: G03F1/24

Abstract: An EUV photomask having a main area and a scribe lane area and reflecting EUV light includes a reflective multilayer film and an absorption pattern, wherein the scribe lane area includes first and second lanes, wherein the first lane includes first and second sub-lanes extending in the same direction as an extending direction of the first lane, wherein the first sub-lane includes a first dummy pattern that is a portion of the absorption pattern, and the second sub-lane includes a second dummy pattern that is a portion of the absorption pattern, and when EUV light that is not absorbed by the first and second dummy patterns and is reflected by the reflective multilayer film is irradiated at least twice by overlapping a negative tone photoresist, an amount of light exceeds a threshold dose of light in the negative tone photoresist corresponding to the first lane.

公开(公告)号：US20240152043A1

公开(公告)日：2024-05-09

申请号：US18381731

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minseung SONG ,  Janghoon KIM ,  Sangho YUN ,  Chan HWANG

IPC: G03F1/22 ,  G03F1/70 ,  G03F1/80 ,  G03F7/00

CPC classification number: G03F1/22 ,  G03F1/70 ,  G03F1/80 ,  G03F7/70616

Abstract: A method of manufacturing an extreme ultraviolet mask including preparing a preliminary layout, forming a plurality of preliminary target patterns by using a plurality of preliminary spacer patterns formed by using the preliminary layout, evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns, preparing a layout configured to form a plurality of spacer patterns by modifying the preliminary layout when the plurality of preliminary target patterns include the abnormal target pattern, and manufacturing an extreme ultraviolet mask with the layout to form a plurality of target patterns by using the plurality of spacer patterns, wherein, the plurality of preliminary spacer patterns extend in one direction.

公开(公告)号：US20240242317A1

公开(公告)日：2024-07-18

申请号：US18528427

申请日：2023-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu KANG ,  Kwangeun KIM ,  Janghoon KIM ,  Seoyoung PARK ,  Sangho YUN ,  Sungeun LEE ,  Woojin JUNG

IPC: G06T5/00

CPC classification number: G06T5/006 ,  G06T2207/10061

Abstract: An scanning electron microscope (SEM) image distortion correction method includes obtaining at least one SEM image of holes provided on a wafer in a two-dimensional array structure, the holes including at least one central hole within a central region of the at least one SEM image and a plurality of peripheral holes outside the central region, expanding each of the plurality of peripheral holes in a minor axis direction such that a ratio of a minor axis to a major axis of each of the plurality of peripheral holes is about 1:1, and expanding each of the plurality of peripheral holes in multiple directions in the at least one SEM image such that a diameter of the at least one central hole and a diameter of at least one of the plurality of peripheral holes are substantially equal to each other.

公开(公告)号：US20240060916A1

公开(公告)日：2024-02-22

申请号：US18228741

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonjun YANG ,  Sangho YUN ,  Woojin JUNG ,  Minsu KANG

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/401 ,  G01N2223/6116

Abstract: Provided is an overlay measuring method including setting an overlay offset on a substrate, obtaining a cell image by irradiating an electron beam, and obtaining a first image of an upper pattern and a second image of a lower pattern, based on the cell image, merging the first image with the second image, and measuring an overlay of the merged image, and correcting a measuring parameter used in measuring the overlay to improve consistency between the overlay offset and a measured result value of the overlay, wherein the measuring parameter is corrected based on a number of measuring failure values classified as a measurement failure in result values of the overlay.

公开(公告)号：US20240258178A1

公开(公告)日：2024-08-01

申请号：US18396878

申请日：2023-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu LEE ,  Minsu KANG ,  Sangho YUN ,  Chan HWANG

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A method of detecting overlay of patterns includes forming a lower pattern and an upper pattern on a substrate. A sample pattern is drawn that has a common tangential line with the lower pattern. A position of a real center of gravity of the lower pattern is calculated using the common tangential line.

公开(公告)号：US20240071751A1

公开(公告)日：2024-02-29

申请号：US18237712

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moosong LEE ,  Sangho YUN ,  Hyoungkook Kim

IPC: H01L21/02 ,  H01L21/449 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/449 ,  H01L21/6715 ,  H01L21/67253 ,  G03F7/162

Abstract: A method of manufacturing a semiconductor device. The method includes providing a viscous solution to a wafer, spinning the wafer to coat at least a portion of the wafer with the viscous solution, and treating the wafer coated with the viscous solution, by using an acoustic wave, wherein a frequency of the acoustic wave and an eigenfrequency of the wafer coated with the viscous solution are same.