Invention Publication
- Patent Title: IMAGE DENOISING FOR EXAMINATION OF A SEMICONDUCTOR SPECIMEN
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Application No.: US17983181Application Date: 2022-11-08
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Publication No.: US20240153043A1Publication Date: 2024-05-09
- Inventor: Tamir EINY , Dror ALUMOT , Yarden ZOHAR , Anna LEVANT
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Main IPC: G06T5/00
- IPC: G06T5/00 ; G06T5/50 ; G06T7/30

Abstract:
There is provided an image generation system and method. The method comprises obtaining a runtime image of a semiconductor specimen with a low Signal-to-noise ratio (SNR), and processing the runtime image using a machine learning (ML) model to obtain an output image with a high SNR. The ML model is previously trained using a training set comprising a plurality of low SNR images associated with a high SNR image. The plurality of low SNR images correspond to a plurality of sequences of frames acquired in a plurality of runs of scanning a first site of the specimen. The high SNR image is generated based on the plurality of low SNR images. The training comprises, for each low SNR image: processing the low SNR image by the ML model to obtain predicted image data, and optimizing the ML model based on the predicted image data and the high SNR image.
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