Invention Publication
- Patent Title: MOSFET-Based Temperature Sensing
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Application No.: US17989614Application Date: 2022-11-17
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Publication No.: US20240167889A1Publication Date: 2024-05-23
- Inventor: Balasubramanian SIVAKUMAR , Liang DAI , Dinesh Jagannath ALLADI
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: G01K7/01
- IPC: G01K7/01
Abstract:
A subthreshold-based MOSFET temperature sensor is provided for generating a subthreshold leakage current that is proportional to a difference between a gate-to-source voltage of a first transistor and a gate-to-source voltage of a second transistor. The subthreshold leakage current is mirrored to a detector for a temperature determination.
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