PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Abstract:
A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.
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