公开(公告)号：US20240168381A1

公开(公告)日：2024-05-23

申请号：US18377365

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jincheol PARK ,  Seonghyeon AHN ,  Honggu IM ,  Sungmin KO ,  Juyoung KIM ,  Juhyeon PARK ,  Naery YU

IPC: G03F7/022 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0226 ,  G03F7/0045 ,  G03F7/2004

Abstract: A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.