- 专利标题: BAND GAP REFERENCE CIRCUIT UNDER LOW SUPPLY VOLTAGE
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申请号: US18518770申请日: 2023-11-24
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公开(公告)号: US20240176378A1公开(公告)日: 2024-05-30
- 发明人: Harim CHOI , Kyung Min SHIN , Yongsung AHN
- 申请人: LX SEMICON CO., LTD.
- 申请人地址: KR Daejeon
- 专利权人: LX SEMICON CO., LTD.
- 当前专利权人: LX SEMICON CO., LTD.
- 当前专利权人地址: KR Daejeon
- 优先权: KR 20220160489 2022.11.25 KR 20230081592 2023.06.26
- 主分类号: G05F3/20
- IPC分类号: G05F3/20 ; G05F1/46
摘要:
Proposed is a band gap reference circuit under a low supply voltage capable of generating a band gap reference voltage even under a low supply voltage by using a plurality of bias voltages separately generated and a current source using these bias voltages without using a diode connected structure used in the related art while not being affected by limitations in the operating voltage of a bipolar transistor. The band gap reference circuit under a low supply voltage includes a voltage reference main circuit configured to generate a first node voltage and a second node voltage in response to a first bias voltage and a band gap reference voltage, and a transimpedance amplifier configured to generate the band gap reference voltage by amplifying a difference between the first node voltage and the second node voltage using the first bias voltage, a second bias voltage, and a third bias voltage.
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