Invention Publication
- Patent Title: OPERATION METHOD OF STORAGE CONTROLLER FOR NONVOLATILE MEMORY DEVICE
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Application No.: US18512613Application Date: 2023-11-17
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Publication No.: US20240176700A1Publication Date: 2024-05-30
- Inventor: Youngjoo SEO , Youngdeok SEO , Sangkwon MOON , Hyunkyo OH , Hee-Tai OH , Heewon LEE , Jisoo KIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR 20220155039 2022.11.28 KR 20230115347 2023.08.31 KR 20230136251 2023.10.12
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/07

Abstract:
An operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.
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