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    STORAGE SYSTEM INCLUDING HOST AND STORAGE DEVICE AND OPERATION METHOD THEREOF
    1.
    发明申请
    STORAGE SYSTEM INCLUDING HOST AND STORAGE DEVICE AND OPERATION METHOD THEREOF 有权

    公开(公告)号：US20230054286A1

    公开(公告)日：2023-02-23

    申请号：US17848820

    申请日：2022-06-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyunkyo OH ,  Sanghyun CHOI ,  Heewon LEE

    IPC: G06F3/06

    Abstract: Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.

    NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
    2.
    发明申请
    NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF 有权

    公开(公告)号：US20250061937A1

    公开(公告)日：2025-02-20

    申请号：US18934502

    申请日：2024-11-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Su Chang JEON ,  Woohyun KANG ,  Seungkyung RO ,  Sangkwon MOON ,  Heewon LEE

    IPC: G11C11/408 ,  G06F3/06

    Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

    OPERATION METHOD OF STORAGE CONTROLLER FOR NONVOLATILE MEMORY DEVICE
    3.
    发明公开
    OPERATION METHOD OF STORAGE CONTROLLER FOR NONVOLATILE MEMORY DEVICE 审中-公开

    公开(公告)号：US20240176700A1

    公开(公告)日：2024-05-30

    申请号：US18512613

    申请日：2023-11-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngjoo SEO ,  Youngdeok SEO ,  Sangkwon MOON ,  Hyunkyo OH ,  Hee-Tai OH ,  Heewon LEE ,  Jisoo KIM

    IPC: G06F11/10 ,  G06F11/07

    CPC classification number: G06F11/1068 ,  G06F11/076

    Abstract: An operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.

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