Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METHOD THEREFOR
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Application No.: US18059849Application Date: 2022-11-29
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Publication No.: US20240178304A1Publication Date: 2024-05-30
- Inventor: Ljubo Radic , Jay Paul John , James Albert Kirchgessner , Johannes Josephus Theodorus Marinus Donkers
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/10 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, a collector region formed within the semiconductor substrate in a first semiconductor region having an upper surface and a collector sidewall, a base region disposed over the collector region, a seed region formed over the semiconductor substrate and coupled to the semiconductor substrate outside the base region, an extrinsic base region having an upper surface and formed over the seed region and electrically coupled to the base region, and an emitter region formed over the base region.
Information query
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