Invention Publication
- Patent Title: VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
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Application No.: US18214755Application Date: 2023-06-27
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Publication No.: US20240196763A1Publication Date: 2024-06-13
- Inventor: Yumin KIM , Seyun KIM , Garam PARK , Hyunjae SONG , Seungyeul YANG , Seungdam HYUN , Jooheon KANG , Jinwoo LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220174186 2022.12.13
- Main IPC: H10N70/00
- IPC: H10N70/00 ; H10B63/00

Abstract:
A variable resistance memory device includes a pillar, a resistance change layer provided at a side surface of the pillar, a semiconductor layer provided at a side surface of the resistance change layer, a gate insulating layer provided at a side surface of the semiconductor layer, a plurality of isolating layers and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer, and an internal resistance layer between the resistance change layer and the semiconductor layer, where a resistance of the internal resistance layer is greater than a resistance of the semiconductor layer when the semiconductor layer includes conductor characteristics and the resistance of the internal resistance layer is less than the resistance of the semiconductor layer when the semiconductor layer includes insulator characteristics.
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