VARIABLE RESISTANCE MEMORY DEVICE

    公开(公告)号:US20230078373A1

    公开(公告)日:2023-03-16

    申请号:US17989085

    申请日:2022-11-17

    IPC分类号: H01L45/00 H01L27/24

    摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

    VARIABLE RESISTANCE MEMORY DEVICE
    4.
    发明公开

    公开(公告)号:US20230337555A1

    公开(公告)日:2023-10-19

    申请号:US18338707

    申请日:2023-06-21

    IPC分类号: H01L47/00

    摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

    VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING

    公开(公告)号:US20210217473A1

    公开(公告)日:2021-07-15

    申请号:US17146999

    申请日:2021-01-12

    摘要: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

    VARIABLE RESISTANCE MEMORY DEVICE

    公开(公告)号:US20210202833A1

    公开(公告)日:2021-07-01

    申请号:US16875119

    申请日:2020-05-15

    IPC分类号: H01L45/00 H01L27/24

    摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.