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公开(公告)号:US20230078373A1
公开(公告)日:2023-03-16
申请号:US17989085
申请日:2022-11-17
发明人: Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号:US20190037645A1
公开(公告)日:2019-01-31
申请号:US15868451
申请日:2018-01-11
发明人: Seyun KIM , Jinhong KIM , Haengdeog KOH , Doyoon KIM , Hajin KIM , Soichiro MIZUSAKI , Minjong BAE , Changsoo LEE
摘要: A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 4×10−6 per Kelvin or less.
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公开(公告)号:US20180077755A1
公开(公告)日:2018-03-15
申请号:US15680830
申请日:2017-08-18
发明人: Seyun KIM , Haengdeog KOH , Doyoon KIM , Jinhong KIM , Hajin KIM , Soichiro MIZUSAKI , Minjong BAE , Hiesang SOHN , Changsoo LEE
CPC分类号: H05B3/12 , H05B3/141 , H05B3/146 , H05B3/148 , H05B3/26 , H05B3/262 , H05B3/265 , H05B2203/013 , H05B2203/017 , H05B2214/04
摘要: A heating element includes a matrix; and a plurality of conductive fillers, wherein some of the plurality of conductive fillers include first nano-sheets and first metal media configured to reduce a contact resistance between the first nano-sheets.
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公开(公告)号:US20230337555A1
公开(公告)日:2023-10-19
申请号:US18338707
申请日:2023-06-21
发明人: Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
IPC分类号: H01L47/00
CPC分类号: H10N70/231 , H10N70/8833 , H10B63/80
摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号:US20230093892A1
公开(公告)日:2023-03-30
申请号:US17685942
申请日:2022-03-03
发明人: Yumin KIM , Doyoon KIM , Seyun KIM , Hyunjae SONG , Seungyeul YANG
摘要: Disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. The memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. The oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.
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公开(公告)号:US20230086939A1
公开(公告)日:2023-03-23
申请号:US18058555
申请日:2022-11-23
发明人: Yumin KIM , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Youngjin CHO
摘要: A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.
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公开(公告)号:US20210217473A1
公开(公告)日:2021-07-15
申请号:US17146999
申请日:2021-01-12
发明人: Youngjin CHO , Jungho YOON , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI
摘要: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.
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公开(公告)号:US20210202833A1
公开(公告)日:2021-07-01
申请号:US16875119
申请日:2020-05-15
发明人: Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
摘要: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号:US20210153300A1
公开(公告)日:2021-05-20
申请号:US17137969
申请日:2020-12-30
发明人: Jinhong KIM , Seyun KIM , Haengdeog KOH , Doyoon KIM , Hajin KIM , Soichiro MIZUSAKI , Minjong BAE , Changsoo LEE
摘要: Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.
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公开(公告)号:US20190131030A1
公开(公告)日:2019-05-02
申请号:US16162488
申请日:2018-10-17
发明人: Dongjin YUN , Seyun KIM , Minsu SEOL , Changseok LEE , Seongheon KIM , Hyangsook LEE , Changhoon JUNG
摘要: Provided are a conductive composite structure for an electronic device, a method of preparing the conductive composite structure, an electrode for an electronic device including the conductive composite structure, and an electronic device including the conductive composite structure. The conductive composite structure may contain graphene and an organic composite layer including a conductive polymer having a work function of about 5.3 eV or lower, and has a sheet resistance deviation of about 10% or less.
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