- 专利标题: IMAGE SENSOR WITH IMPROVED LIGHT CONVERSION EFFICIENCY
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申请号: US18594922申请日: 2024-03-04
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公开(公告)号: US20240204032A1公开(公告)日: 2024-06-20
- 发明人: Shih-Yu LIAO , Tsai-Hao HUNG , Ying-Hsun CHEN
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; G01J1/44 ; H04N25/70
摘要:
The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.
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