- 专利标题: MULTI-SECTION HIGH POWER SEMICONDUCTOR OPTICAL AMPLIFIER (SOA) AND FABRICATION METHOD THEREOF
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申请号: US18084896申请日: 2022-12-20
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公开(公告)号: US20240204484A1公开(公告)日: 2024-06-20
- 发明人: Dapeng XU , Klaus Alexander ANSELM , Huanlin ZHANG
- 申请人: Applied Optoelectronics, Inc.
- 申请人地址: US TX Sugar Land
- 专利权人: Applied Optoelectronics, Inc.
- 当前专利权人: Applied Optoelectronics, Inc.
- 当前专利权人地址: US TX Sugar Land
- 主分类号: H01S5/20
- IPC分类号: H01S5/20 ; H01S5/02 ; H01S5/227
摘要:
A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.
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