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公开(公告)号:US20240405505A1
公开(公告)日:2024-12-05
申请号:US18205340
申请日:2023-06-02
Applicant: Applied Optoelectronics, Inc.
Inventor: Dapeng XU , Klaus Alexander ANSELM , Nahid Sultana
Abstract: Methods of manufacturing edge-emitting lasers include cleaving a semiconductor wafer along one or more streets formed on the wafer. A street is an extended region formed without dielectric and metal layers and may be formed on the semiconductor wafer, for example, by a selective wet etching process or a dry etching process. Cleaving along the street(s) without dielectric and metal layers achieves cleaved facets, which are substantially free from microstep defects and metal contamination. After cleaving, a dielectric material may be provided on the remaining street portions along the ends of the cleaved facets, for example, by intentional overspray deposition of facet coatings.
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公开(公告)号:US20240204484A1
公开(公告)日:2024-06-20
申请号:US18084896
申请日:2022-12-20
Applicant: Applied Optoelectronics, Inc.
Inventor: Dapeng XU , Klaus Alexander ANSELM , Huanlin ZHANG
CPC classification number: H01S5/2054 , H01S5/0206 , H01S5/2275 , H01S5/34
Abstract: A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.
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